发明名称 FORMATION OF MICROPATTERN
摘要 PURPOSE:To enable slip of pattern position to be eliminated and a submicron pattern high in precision to be formed by coating an electron beam resist with a solution of the salt type complex of polymer polycations and tetracyanoquinodimethane. CONSTITUTION:A thin film is formed on the electron beam resist by coating it with a solution of the salt type complex of polymer cations and tetracyanoquinodimethane having a high electric conductivity of 10<-9>-10<-10>S.cm<-1> in order to prevent accumulation of electrostatic charge generated at the time of electron beam scanning. The complex is soluble in many kinds of solvents, and good in film-forming property at the time of coating the substrate to be treated by the spin coating method, and it can be formed into a uniform electrically conductive film free from any pinhole as thin as 0.05-0.4mum. As the polymer polycations, polyvinylbenzyltriethylammonium, poly-4-vinyl-N-methylpyridinium, and the like can be enumerated.
申请公布号 JPS62113134(A) 申请公布日期 1987.05.25
申请号 JP19850254001 申请日期 1985.11.13
申请人 FUJITSU LTD 发明人 KAWASAKI YOKO;YONEDA YASUHIRO;SAITO KAZUMASA;MIYAGAWA MASASHI
分类号 G03F7/039;G03C1/00;G03F7/11;G03F7/26 主分类号 G03F7/039
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