| 摘要 |
PURPOSE:To realize a semiconductor device wherein aluminum wiring is easily accomplished and its surface flatness is excellent by a method wherein contact hole side walls and bottom are subjected to silification and the contact hole if filled with polycrystalline silicon. CONSTITUTION:A contact hole 3 is provided in a silicon oxide film 2 formed on a semiconductor silicon substrate 1, a first polycrystalline silicon layer 7 is formed by deposition on the inside surface of the contact hole 3, and then anisotropic etching is accomplished, after which the first polycrystalline silicon layer 7 is retained on the side walls of the contact hole 3. Next, a high-melting metal layer 4 is deposited on the first polycrystalline silicon layer 7 on the side walls of the contact hole 3 and on the semiconductor silicon substrate 1 on the bottom of the contact hole 3, heat treatment is accomplished for the formation of ahigh-melting metal silicide layer 5 equipped with low resistance. A second polycrystalline silicon layer 8 is formed by deposition on the silicon oxide film 2 including the portion thereof located in the contact hole 3, anisotropic etching is accomplished, the second polycrystalline silicon layer 8 is removed from the surface of the silicon oxide film 2 with the portion thereof positioned in the contact hole 3 retained. A flattened surface realizes.
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