PROCESS FOR MANUFACTURING HIGH POWER SEMICONDUCTOR DEVICES

摘要

In a closed tube diffusion process a source (12) of a gettering agent comprising a non-metallic chlorine compound is disposed within a sealed quartz tube (10) together with a source (14) of a suitable doping agent and wafers (20) of a semiconductor material which are to be doped. The quartz tube (10) is then disposed within a diffusion furnace and the gettering of impurities is carried out during the diffusion. The gettering source (12) may comprise a sealed quartz capillary tube which cracks to allow the gettering compound to contact the wafers when the tube (10) is placed in the furnace.