FORMATION OF CONTACT ON SEMICONDUCTOR SURFACE,申请号JP19860211836-传众专利搜索

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发明名称	FORMATION OF CONTACT ON SEMICONDUCTOR SURFACE
摘要
申请公布号	JPS62112323(A)	申请公布日期	1987.05.23
申请号	JP19860211836	申请日期	1986.09.10
申请人	TEXAS INSTR INC <TI>	发明人	DAAKU ENU ANDAASON
分类号	H01L21/28;H01L21/285;H01L21/3205;H01L21/768	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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