| 摘要 |
PURPOSE:To enable the film growth to be performed with good film quality without causing excess compution of the film growth material by allowing the reaction chambers in which a reaction gas is thermally decomposed to generate the film growth material to communicate with the film growth chamber through the orifices which focus the film growth material into a beam. CONSTITUTION:In the upper portion within a film growth chamber 1 a plurality of cylindrical reaction chambers 3 made of quartz glass are provided. The film growth chamber 1 is allowed to communicate with a vacuum evacuation system 8, and is evacuated along with the respective reaction chambers 3 with which it is communicating through orifices 5. The film growth material composed of the radicals obtained by thermal decomposition within the reaction chambers 3 is made into a beam through the orifices 5 for free application to a substrate 2 within the film growth chamber 1. By separating the film growth chamber 1 and the reaction chambers 3, high substrate temperature within the film growth chamber can be prevented, and the film growth material obtained by thermal decomposition in the reaction chambers can be jetted out in a beam, thereby enabling a high-quality film to be grown.
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