发明名称 PARTIAL PLATING METHOD
摘要 PURPOSE:To plate partially the inside of the upper branched part of a metallic chip by putting the anode having an insulating coating in the branched part and by supplying an electric current when holes pierced in the coating coincide with the plating positions of the metallic chip. CONSTITUTION:The anode 11 having an insulating coating 12 is put in the space between the projected parts 4 of a female contact 1. The coating 12 has plural holes 13 pierced every pitch of the contact 11 so that current paths are formed during electroplating. The contact 1 is moved with respect to the fixed anode 11. A pulsating current flows every time the holes 13 in the coating 12 confront the projected parts 4 of the contact 1, so partial plating is carried out.
申请公布号 JPS62109992(A) 申请公布日期 1987.05.21
申请号 JP19850250260 申请日期 1985.11.08
申请人 FUJITSU LTD 发明人 SHIOIRI SHIGEO;SHIMOYA TOMOHIDE
分类号 C25D5/02;H01R43/00 主分类号 C25D5/02
代理机构 代理人
主权项
地址