Method of fabricating an improved insulated gate semiconductor device.

摘要

To provide a MOSFET power switching device with a low on-resistance, the body regions of active MOSFET cells are formed through a pre-existing continuous high conductivity zone created immediately adjacent the surface of a common drain region. This zone retards the depth of diffusion of the cell body regions to achieve a shorter MOSFET channel length and also forms lower resistivity portions of the device main or forward current paths; both factors contributing a lowering of the device on-resistance.