| 摘要 |
PURPOSE:To prevent deterioration in characteristic due to the lowering of a withstanding voltage between a source and a drain even when a MIS transistor which constitutes a sense amplifier is made into a short channel 1 construction by keeping a voltage between the sourc and the drain which is applied on an amplifying MIS transistor low voltage. CONSTITUTION:As for the potential of terminals N4 and N5, contrary to the potential of the terminal N4 at a low potential side is at a ground voltage level GND since the gate potentials of clamping transistors QC1 and QC2 are VCC, the potential of the terminal N5 at a high potential side becomes (VCC-Vth) assuming that the threshold voltage of the transistor QC2 is Vth. At such a time, since the potential of a terminal N2 is the ground voltage GND, the voltage between the source and the drain of an amplifying transistor Q2 goes to (VCC-Vth) and the voltage between the source and the drain of the clamping transistor QC2 goes to Vth, that is lower than the maximum voltage between the source and the drain of a cross-linking transistor. Therefore, the voltage between the source and the drain applied on the amplifying MIS transistors Q1 and Q2 can be held at the low voltage even when the sense amplifier is constituted of a miniaturized short channel MIS transistor.
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