| 摘要 |
PURPOSE:To improve the degree of integration, and to increase working speed by containing an electrode connecting hole, which is formed to the upper sections of source-drain regions and three side surfaces thereof for connecting an electrode to the source-drain regions shape the side surfaces of a field insulating film and other side surfaces thereof form the side surfaces of a second insulating film. CONSTITUTION:The titled device has a field insulating film 2 and a gate insulating film 3 formed onto a semiconductor substrate 1, an silicon nitride group Si3N4 first insulating film 5 shaped onto the upper surface of a polycrystalline silicon gate electrode 4 formed onto the insulating film 3, and source-drain regions 6 shaped to the semiconductor substrate 1. The titled device is constituted, including CVD.SiO2 second insulating films 7, which are shaped slantingly to the side surfaces of the gate electrode 4, consist of substances except an silicon nitride group and have etching characteristics different from the first insulating film 5, and electrode connecting holes 8, which are formed to the upper sections of the source-drain regions 6 and three side surfaces thereof for connecting electrodes 9 to the source-drain regions 6 shape the side surfaces of the field insulating film 2 and other side surfaces thereof form the side surfaces of the second insulating films 7.
|
