发明名称 FINE PATTERN FORMING METHOD
摘要 PURPOSE:To form a fine pattern by coating a substrate with a thin film of an org. material having no sensitivity to high energy radiant rays such as X-rays or electron beams and by applying an X-ray resist to the thin film so as to reduce the effect of secondary electrons from the substrate on the X-ray resist. CONSTITUTION:A thin film 5 of an org. material having no sensitivity to radiant rays such as X-rays or electron beams is formed on a substrate 1 to be processed. An X-ray resist 2 is applied to the thin film 5, irradiated with soft X-rays 4 through an X-ray mask 3 and developed to form a fine X-ray resist pattern 2a. Polyimide resin, phenol resin or polyvinyl alcohol is used as the org. material. The effect of secondary electrons from the substrate 1 on the X-ray resist 2 is reduced and a fine pattern is easily formed.
申请公布号 JPS62108248(A) 申请公布日期 1987.05.19
申请号 JP19850249541 申请日期 1985.11.06
申请人 MITSUBISHI ELECTRIC CORP 发明人 ISHIO NORIAKI
分类号 G03F7/26;G03C5/00;G03F7/11;G03F7/20;H01L21/027 主分类号 G03F7/26
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