| 摘要 |
PURPOSE:To stabilize a punch through voltage and achieve stable characteristics by a method wherein a high concentration N-type region and a P-type region are provided near a bipolar transistor to form a diode. CONSTITUTION:A P-type base region 2 in which a high concentration N<+> type emitter region 3 is provided is formed on a semiconductor substrate to form a bipolar transistor. A diode composed of a P-type region 9 and a high concentration N-type region 4 are provided separated from the region 2. When a reverse voltage is applied between the region 2 and an N-type collector region 1, a depletion layer spreading in the region 1 is contacted with the region 9 and a punch through phenomenon is induced. With this constitution, a punch through voltage is stabilized and stable characteristics can be achieved.
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