| 摘要 |
<p>PURPOSE:To avoid the cracking of semiconductor crystalline substrate improving the yield thereof by a method wherein semiconductor substrate is half-diced to form a mesa type structure in the cleavage direction of the semiconductor crystalline substrate. CONSTITUTION:Assuming the facial angle of a semiconductor to be 100 face, dicing lines 10 are formed within the range making an oblique angle of 2 deg.-20 deg. in the easily cracking cleavage direction 8 and the other cleavage direction 9 rectangular to the direction 8. The cracking ratio of semiconductor crystalline substrate is culminated because of the deflection angle theta of 0 deg. coinciding with the easily cracking direction while being subject to the deflection angle theta of 45 deg., the substrate is most hardly cracked. On the other hand, when the semiconductor substrate is divided into individual chip, the favorable chip shape can be assured subject to the deflection angle theta of 0 deg. in the easily cracking direction coinciding with the chip dividing direction. When the deflection angle theta is 2 deg.-20 deg., the movement of semiconductor crystalline substrate and the resultant improvement of yield can be assured without deteriorating the chip shape.</p> |
