| 摘要 |
PURPOSE:To reduce the unnecessary use of glass material to no avail as well as to decrease the generation of poor characteristics in reverse direction such as the deterioration in bias and the like by a method wherein a glass-coated layer is not formed on all over the main surface of a semiconductor substrate, and the glass-coated layer is formed only on the surface and the circumferential part of a groove. CONSTITUTION:SiO2 films 12 and 13 are formed by thermal oxidization on the main surface of a silicon substrate 1 consisting of an N<+> type substrate region 2, an N-type region 3 and a P<+> type region 4. A deep groove 6 reaching the N<+> type region 2 is formed in a shallow groove 14, and a P-N junction 5 is exposed. Then, a glass-coated layer 7 is formed on the surface of the grooves 6 and 14 by performing an electrophotoretic method. Subsequently, the circumferential part of the glass-coated layer 7 is removed by performing a selective etching using the mixed acid of hydrofluoric acid and hydrochloric acid, and at the same time, the SiO2 film 12 is also removed by etching, and an aperture 8 to be used for electrode is formed. Then, Ni electrodes 9 and 10 are formed in the aperture part 8 on the remaining part 7a of the glass-coated layer 7 and the lower surface of the substrate 1 by performing an electroless plating method. Then, the substrate 1 is cut along a groove 15 which functions as a marker line, and it is separated into diode chips 11c.
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