| 摘要 |
PURPOSE:To assure the operation with high reliability for a long time even in high temperature and high humidity by a method wherein a part of element and leadwire of a semiconductor device is coated and processed with a specified trimethylsilane base compound and then further coated, sealed and formed with resin composition. CONSTITUTION:At least a part of element and leadwire is coated, sealed and formed with a resin composition containing trimethylsilane base compound represented by the structural formula. An ether or ester compound comprising zirconium and aluminium containing amino group, carboxyl group, fatty acid group, methacryoxy group as a terminal group can be applicable to the trimethoxysilane base compound. Besides, an alcoholate base compound of a metal selected from aluminium, titanium, zinc, lead and zirconium as a component can be applicable to a filming resin composition. |
