| 摘要 |
PURPOSE:To improve a step-coverage extremely, reduce the contamination of a protection layer surface, obtain excellent photosensitivity, and improve the value of S/N, by forming a taper in a light-passing hole part of a photoconductor so as to become gradually thin toward a light source. CONSTITUTION:After a draw-out electrode 8 made of ITO as an individual electrode of closely adhered readout system is formed so as to be about 3,000Angstrom thick, a pattern for amorphous silicon etching is performed. In the etching process of a photoconductor, a taper is formed in the light-passing hole part 6a of a photoconductor 6, so as to become gradually thin toward a light source, by applying both etching liquid with high etching rate and an etching liquid with low etching rate. A light-passing hole 10 is formed by etching a common electrode 5, and a light-receiving part is formed to make up a photoelectric conversion element by etching of a transparent electrode 7 and a draw-out electrode 8. Whichever method may be adopted for forming a protection layer 9, defects for step-coverage can not be found, and the unevenness of the stuck- surface of the protection layer 9 can be extremely reduced.
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