| 摘要 |
PURPOSE:To shorten a manufacturing period and to reduce manufacturing costs, by introducing high concentration impurities in a region other than a part, which corresponds to an emitter electrode of polycrystalline Si, thereafter using a mask, which is formed in the pattern shape of the emitter electrode and gate electrodes, and performing impurity introduction and etching. CONSTITUTION:In a P-type semiconductor substrate 1, N-type embedded layers 2 and 3 and a P-type embedded layer 4 are formed. Polycrystalline Si 12 and a mask 13 are formed by a conventional method. After the mask 13 is removed, photoresist 29 is selectively formed. A pattern is formed at positions corresponding to parts where gate electrodes and emitter and collector electrodes are formed in the photoresist 29. With the photoresist 29 as a mask, the same high concentration impurities are introduced in the polycrystalline Si 12 again. With the photoresist 29 as a mask, anisotropic etching is performed. Then, the patterns of the gate electrodes 15 and 16 can be formed at the polycrystalline Si part, in which the high concentration impurities are introduced. An emitter electrode 18 and a collector electrode 19 are simultaneously formed from the polycrystalline Si part, in which the high concentration impurities are not introduced.10: Base region. |
