| 摘要 |
PURPOSE:To obtain excellent resolving power and response speed, by providing the second light shielding film, which shields a part that is not covered with a light shielding layer other than a light receiving part in a a-Si layer, on a glass substrate, which is provided on an amorphous Si layer through an insulating transparent resin. CONSTITUTION:On a glass substrate 1, Cr is deposited. The Cr is patterned into a specified shape, a metal electrode 2 is formed. Thereafter, an a.Si layer 3 is deposited by glow discharge decomposition of silane. On the layer 3, indium-tin oxide is formed as a transparent electrode 4, and Cr is formed as a light shielding film 5, by using a metal mask. The light shielding film is patterned into a specified shape. Cr is further deposited on one surface of another glass substrate 1' so as to form a pattern, and a light shielding film 5' is formed. Thereafter, an insulating transparent resin 6, which also serves the role of passivation of a light receiving element, is applied on the glass substrate 1, on which the formation of the light receiving element is finished. The glass substrate 1', on which the light shielding film 5' is formed, is provided on the resin so that air does not enter inbetween and fixed so that the part other than a light receiving part is shielded. The resin is cured, and the titled sensor is completed.
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