| 摘要 |
PURPOSE:To obtain a magneto-resistance element which can obtain an output of good linearity in simple steps by forming ion implanted regions and nonionic regions on thin magnetic conductive strips obliquely longitudinally with respect to the strips. CONSTITUTION:A permalloy film 22 is formed by depositing method or sputtering method on a silicon substrate 21 formed with an insulating layer 20, with portions 23, 12 which are not ion implanted being masked by use of photoresist, Ar<+> or Ne<+> ions are implanted into the portions 24, 11 inclined at approx. 45 deg.. The soft magnetic property of the region 24 is lost, and the magnetization is not affected by an external magnetic field. An SiO2 insulating layer 25, Cr-An electrode pattern 26, and a protecting SiO2 layer 27 are formed. When the magnetization M1 of the region 11 is aligned in a predetermined direction in addition to the direction of the magnetic field at 45 deg. and the magnetic field is reversely applied, the magnetization Mn of the region 12 is stably arranged in a direction for closing the magnetic flux according to the anisotropic shape. When the external magnetic field is not applied, the angle of the magnetization Mn and the current I becomes 45 deg.. |
