发明名称 INTEGRATED SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To remove the maximum order supermode by limiting the widths of a semiconductor layer and a waveguide corresponding to the difference in refractive indexes between the waveguide and semiconductor layers in a waveguide adjacent to the waveguide. CONSTITUTION:A semiconductor layer 2, a lower clad layer 4, an active layer 5, an active region 6, and an upper clad layer 7 are formed on a semiconductor substrate 1. A 10-string waveguide 11 made of 10-string stripe grooves formed by etching the layer 2 is limited in width W in response to the value of the difference of the refractive indexes of the waveguide 11 and the layer 2 between the adjacent waveguides 11 to the waveguide 11. Thus, since an intrinsic mode generated by optical coupling, i.e., the maximum order supermode is removed, the reference mode having a gain larger next to the maximum order supermode can readily rise, thereby increasing the farther visual field image perpendicularly to the end face to the maximum.
申请公布号 JPS62102578(A) 申请公布日期 1987.05.13
申请号 JP19850240534 申请日期 1985.10.29
申请人 AGENCY OF IND SCIENCE & TECHNOL 发明人 HIUGA SUSUMU
分类号 H01S3/00;H01S3/06;H01S3/07;H01S5/00;H01S5/40 主分类号 H01S3/00
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