| 摘要 |
PURPOSE:To obtain a BH-LD which is formed with a P-N junction having high withstanding voltage and is largely improved in characteristics by forming a buffer layer made of multiple-element mixed crystal which is hardly thermally decomposed and laminating a current block layer thereon. CONSTITUTION:Two parallel grooves 30, 31 having 5mum of width of the depth arriving at a buffer layer 2 and 3mum of depth are formed in parallel with (011) direction on a multilayer film semiconductor wafer in which an N-type InGaAsP buffer layer 2, an N-type InP clad layer 3, an InGaAsP active layer 4, a P-type InP clad layer 5 are sequentially laminated on an (100) N-type InP substrate 1. Thus, a mesa stripe 10 having 2mum of width and an active layer recombined by light emission is formed. A P-type InP current block layer 6, an N-type InP current block layer 7 are laminated except the upper surface of a mesa on the substrate, and a P-type InP buried layer, and a P-type InGaAsP electrode layer 9 are further grown over the entire surface to obtain a BH-LD.
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