| 摘要 |
PURPOSE:To eliminate a latchup phenomenon by inserting field effect transistors between a power source pad and power wirings, and turning OFF the transistor when a latchup occurs. CONSTITUTION:Field effect transistors FETs 6, 8, 9 are inserted between a power source pad 1 and power wirings 2. When a latchup phenomenon occurs, a potential at a point (a) drops, FET 8 becomes ON and FET 9 becomes OFF. Accordingly, FET 6 becomes OFF so that the voltage of the wirings 2 is eliminated. Thus, the latchup phenomenon is eliminated. |
