| 摘要 |
PURPOSE:To protect a passivation film and a wiring metal, and to improve damp-proofing by forming the wiring metal higher than the height of an internal circuit to the outermost circumferential section of a semiconductor chip. CONSTITUTION:Internal wirings 2 for an integrated circuit are evaporated onto a silicon chip 1, and coated with a passivation film 4. A metallic wiring 3 on the outermost circumference of a chip is constituted through evaporation or etching so as to be made higher than the internal wirings 2 in order to protect the internal wirings 2, and coated with the same passivation film 4. Accordingly, since the outer circumferential section of the semiconductor chip is made higher than the internal wirings, compressive stress is concentrated to the wiring metal of the outer circumferential section, thus protecting the wirings and passivation of an internal circuit, then largely improving damp- proofing.
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