发明名称 |
FORMATION OF SELF-MATCHING PATTERN |
摘要 |
A photoresist composition comprising a matrix resin and two photoactive additives, one of which causes acceleration of dissolution upon irradiation and one of which causes deceleration of dissolution upon irradiation, the photoactive additives being such that the dissolution-accelerating additive is activated by at least one narrow bandwidth of radiation which does not activate the dissolution-decelerating additive. Self aligned multilayer or multi-level structures can be made by a process using that photoresist composition. |
申请公布号 |
JPS62100751(A) |
申请公布日期 |
1987.05.11 |
申请号 |
JP19860214237 |
申请日期 |
1986.09.12 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
UIRIAMU DEINAN HINSUBAAGU;KAARUTON GURANTO UIRUSON |
分类号 |
H01L21/30;G03C1/00;G03F7/004;G03F7/008;G03F7/022;G03F7/095;G03F7/20;G03F7/26;H01L21/027 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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