MANUFACTURE OF INFRARED DETECTOR

摘要

PURPOSE:To form passivation films of infrared detectors by a method wherein a plurality of resin buried type chips are bonded to an electrode substrate and the surface of the respective chips exposed out of the resin are simultaneously subjected to anode oxidization. CONSTITUTION:The surface of a semiconductor crystal plate 22 for infrared detection bonded on a supporting substrate 21 for processing is selectively etched to form a plurality of protrusions 24. An anode oxide film 25 is formed on the surface of the crystal plate 22 including the protrusions 24 and the crystal plate 22 is selectively etched to form a plurality of chips 27 with the protrusions 24 on the substrate 21. After the chips 27 are buried in resin material 28 and the resin material 28 is cured, only the anode oxide film 5 is removed. Then, the chips 27 are removed from the substrate 21 to make a thin layer. The side of the respective protrusions 24 of the chips 27 is bonded to an electrode substrate 29 with conductive material in between and anode oxidization is applied to the surfaces which are exposed out of the burying resin material 28 and are to be photodetecting parts and the passivation films 30 of infrared detectors are formed simultaneously and securely.