发明名称 STRUCTURE FOR THIN FILM TRANSISTOR
摘要 PURPOSE:To make TFT free from AC noise possible by arranging thin film polarizers separating them at a space of light wavelength and setting the direction of polarization of the polarizers to make the state of extinction with polarizers provided on a glass substrate facing the matrix substrate of a display unit. CONSTITUTION:Metallic thin film polarizers 18 are provided on the surface of a protective film 16 and the metallic thin film polarizers 18 are arranged in the direction X along the direction of current between source drain electrodes 14, 15 at light wavelength space (d) and separate in the direction Y which is right angles to the direction X. Actual value of (d) is about 5,000Angstrom , and separated forming of metallic thin film polarizers of this spacing can be made by using photolithography by electron beam or X-ray. The direction of polarization of metallic thin film polarizers 18 is arranged to make 90 deg. to the direction of polarizers provided on a glass substrate facing the matrix substrate (transparent glass substrate 17) of a display unit on which the thin film TFT are mounted, that is, to make the state of extinction.
申请公布号 JPS6299726(A) 申请公布日期 1987.05.09
申请号 JP19850239396 申请日期 1985.10.28
申请人 FUJITSU LTD 发明人 KAWAI SATORU;NASU YASUHIRO;MATSUMOTO TOMOTAKA;TATSUOKA KOICHI
分类号 H01L29/78;G02F1/133;G02F1/1335;G02F1/136;G02F1/1368;G09F9/35;H01L27/12;H01L29/786 主分类号 H01L29/78
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