| 摘要 |
PURPOSE:To obtain the titled alloy having a high sensitivity and a reduced dark decay by controlling a surface oxidation state of As having a specific grain size, and by forming the alloy of As and Se followed by doping the obtd. alloy with an oxygen atom, thereby regulating the amount of the oxygen atom and improving an electrostatic charge potential. CONSTITUTION:The grain size of As is 1-10mm, the oxidized film formed on the surface of As is removed, and the obtd. As is allowed to stand in a chamber having <=60% a humidity at a room temp. for >=1 day. The obtd. As solely or together with a small amount of As2O3 is mixed with Se to produce the As2Se3 alloy and then, the obtd. alloy is doped with the oxygen atom so as to make up the oxygen content to about 100-200ppm. And, the obtd. alloy is used to the photosensitive body. Thus, as the oxygen content of said alloy is easily controlled, the photosensitive body having the improved sensitivity is obtd. |
