发明名称 HIGH-PURITY MOLYBDENUM TARGET AND HIGH-PURITY MOLYBDENUM SILICIDE TARGET FOR LSI ELECTRODES AND PROCESS FOR PRODUCING THE SAME
摘要 <p>There is provided a high-purity molybdenum target or highpurity molybdenum silicide target for LSI electrodes which comprises a high-purity metallic molybdenum having an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb. Further, a process is provided for producing such target comprising a wet purification processing followed by a series of dry processings.</p>
申请公布号 CA1221475(A) 申请公布日期 1987.05.05
申请号 CA19840459984 申请日期 1984.07.30
申请人 NIPPON TELEGRAPH AND TELEPHONE CORPORATION;NIHON KOGYO KABUSHIKI KAISHA 发明人 OIKAWA, HIDEO;AMAZAWA, TAKAO;HONMA, NAKAHACHIRO;MIYAZAKI, HIDEO;KYONO, IWAO;MORI, NOBUYUKI;KATOH, YOSHIHARU;KUROKI, MASAMI
分类号 H01L29/78;C22B34/34;H01L21/28;H01L21/285;H01L29/49;(IPC1-7):H01L29/40 主分类号 H01L29/78
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