PROCESS FOR THE MANUFACTURE OF A MIXTURE BASED ON TRICHLOROSILANE FOR USE IN THE MANUFACTURE OF HIGH PURITY SILICON

摘要

Trichlorosilane, SiHCl3, is facilely prepared by (i) thermally reducing silicon tetrachloride, SiCl4, with hydrogen to produce reaction admixture comprising SiHCl3 and hydrochloric acid, said thermal reduction being carried out in a thermal plasma while tempering the reaction medium with a cooling gas, (ii) reacting said step (i) reaction admixture with elemental silicon at a temperature of from about 250 DEG to 350 DEG C. to produce SiHCl3 and hydrogen therefrom, and thence (iii) separating (iiia) the plasma-creating, hydrogen and cooling gases, and (iiib) product silicon chlorides therefrom.