| 摘要 |
<p>A metal-organic transport compound that permits the growth of readily reproducible beryllium doped epitaxial layers is described. In a MOCVD reactor system, a process is performed involving the epitaxial deposition of a layer of a semiconductor material, including a given elemental species, onto a semiconductor substrate maintained within the MOCVD reactor chamber. The elemental species is obtained from the decomposition of a vapor-phase organo-metallic compound consisting essentially of diethylberyllium.</p> |
