Controllable three-layer thyristor - has P-type diffusion zones on both sides of single crystal plate, bottom one with anode and upper with N-type diffusion rings

摘要

The thyristor is produced as an integrated circuit from the silicon single crystal plate subjected to a diffusion and electrode forming process. On one side of the single crystal plate (n2) is a 'p' conducting diffusion zone (p2) that is covered with an anode for both thyristor stages. The opposite side has a 'p' conducting diffusion zone (p1) that has formed rings of 'n' conducting diffusion zones (n1,n3). One zone (n3) is in contact with the cathode (2) of the main thyrsitor. A further ring electrode (3) forms the control electrode of the main thyristor and the cathode of the control thyristor. A central electrode (4) provides control of the control electrode.