| 摘要 |
PURPOSE:To obtain a panel light emitting type semiconductor laser which can be readily manufactured with planar structure by laminating a multiplex quantum well (MQW) structure active layer and a clad layer on a compound semiconductor substrate, and diffusing in high density an impurity in the MQW layer and the clad layer except a laser light emitting unit. CONSTITUTION:A distributed reflecting region 106 in which an InP low refractive index layer 107 an an InGaAsP high refractive index layer 108 are laminated in the same as or one half of the thickness of the wavelength lambda of a laser light 13, an N-type InP layer 4, an MQW layer 101 in which 10 non-doped N-type InP barrier layers and non-doped N-type InGaAsP well layers are alternately laminated, P-type InP layer 5, and P-type InGaAsP layer 6 are sequentially laminated on an N-type InP substrate 2. Zn is diffused in the portion except the laser light emitting unit of the layers 5, 6 and 101 to form a high density P-type impurity diffused region 102, and an electrode 7 is deposited on this portion. Then, since a panel light emitting type semiconductor laser is formed in a planar structure, the manufacture is made ready to improve the characteristics. |
