| 摘要 |
PURPOSE:To reduce the temperature dependence of the offset in a silicon diaphragm type pressure sensor by bonding the structure to a semiconductor element in a point contact manner. CONSTITUTION:A diaphragm 2 is formed on a first main surface of a silicon chip 1 by recessing part of the first main surface and an electronic circuit is integrated on a second main surface. A pedestal 3 consists of pyrex having a roughly equal thermal expansion coefficient to that of silicon and the pedestal 3 and the silicon chip 1 are bonded by an electrostatic bonding method in a vacuum. The bonding of the pedestal 3 and a structure 7 is bonded by a method wherein an epoxy silver paste with a fine area is applied on the pedestal by a screen printing method and so on and the pedestal is bonded on the structure 7 in a point contact manner. As the bonded part of the pedestal 3 and the structure 7 is bonded in a point contact manner in such a manner, the contact area becomes smaller and the effect of thermal expansion of the structure 7 becomes harder to conduct to the pedestal 3. Accordingly, the effect of thermal expansion of the structure 7, which exerts on the diaphragm 2 formed on the silicon chip 1, can be reduced. |
