| 摘要 |
PURPOSE:To efficiently convert radioactive ray to charge by laminating a photoconductor layer on a scanning circuit, and further laminating a phosphor layer thereon. CONSTITUTION:A radiation solid-state image pickup element has a semiconductor substrate 11 made of Si, a source 12, a gate 13, a drain 14, an insulating layer 16 of SiO2, Si3N4, secondary electrode 17B for demarcating picture elements, and primary electrode 17A for coupling the secondary electrode with the source. The primary electrode is formed of the electrodes 17A, 17B. The photoconductor layer 18 employs Bi12GeO20, PbTe having high X-ray absorbing capacity. A picture element separating layer 19 for preventing between the picture elements from leaking and mixing in the colors is formed by forming grooves by plasma etching on the layer 18, and an insulator as SiO2, Si3N4 is formed to be formed in the groove. Since the phosphor layer of each picture element unit is surrounded at the side and the upper face with a light reflecting layer 22 and a light reflecting layer 23, the light generated by the layer 21 is incident to the layer 18 of the same picture element by the radioactive ray incident to the layer 21.
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