| 摘要 |
<p>PURPOSE:To prevent plasma damage at the time of formation through a plasma CVD method by covering an ITO film for a display electrode with a metallic film during the time when a thin-film field-effect transistor is shaped. CONSTITUTION:An indium-tin oxide film (an ITO film) 2 is formed onto a glass substrate 1 as a display electrode. A chromium film 3 is shaped onto the ITO film as a gate electrode. The superposed ITO and chromium two layer films are processed to the predetermined shapes of the gate electrode 4 and the display electrode 5 through photolithographic-etching. An silicon nitride film 6 as a gate insulating layer, an amorphous silicon film 7 as a semiconductor layer and a phorus-doped N<+> amorphous silicon film 8 as an ohmic contact layer are formed continuously by using a three-chamber in-line type plasma CVD device. Lastly, a chromium film for the gate electrode coated onto a display electrode 13, a chromium film for drain-source electrode and an silicon nitride film as a protective film are removed through photolithographic-etching.</p> |
