发明名称 CORRECTING METHOD DEFECT FOR OF PHOTOMASK
摘要 <p>PURPOSE:To decrease the occurrence of separation of a correcting part by irradiating a laser beam or electronic beam to a defective part to be corrected on a photomask in the mixed gas atmosphere with metallic compound gas and carbon compound gas, forming silicon carbide at the defective part and filling the defective part. CONSTITUTION:In a vacuum container 12, a photomask 10 having a defect to be corrected is arranged, and a vacuum degree specified beforehand is kept in the vacuum container 12. Next, by using the stage system, the laser beam irradiating position of a laser beam generating source 4 is almost opposite to a pin hole 3 to be corrected for the photomask, and the silane gas and the carbon dioxide gas are introduced into the vacuum container 12. The position, where a laser beam 5 is irradiated, corresponds to the pin hole 3, a fine area 6 is irradiated so that the irradiating scope can be the same size as the pin hole 3, the beam diameter of the laser beam 5 is adjusted and the pin hole 3 is irradiated. A silicon carbide SiC is formed and accumulated to the pin hole 3, the pin hole 3 is filled by a silicon carbide 13 and comes to be transparent. Thus, without worry about the peeling off of the defect correcting part, correction can be executed without fail.</p>
申请公布号 JPS6283749(A) 申请公布日期 1987.04.17
申请号 JP19850224290 申请日期 1985.10.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 MATSUDA SHUICHI;WATAKABE YAICHIRO
分类号 G03F1/00;G03F1/72;G03F1/74;H01L21/027 主分类号 G03F1/00
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