| 摘要 |
PURPOSE:To improve reliability in a information holding characteristic and the density of integration, in a semiconductor integrated circuit device having a memory function, by constituting the wirings in an at least memory cell array with a conducting layer, which is formed by a chemical vapor deposition technology. CONSTITUTION:Semiconductor regions 4 constitute information storing capacitor elements 4 and are provided beneath the entire area of the elements C. Barrier regions (barrier structure) are constituted. As conductor plates 7, a material, in which resistance-value decreasing impurities (phosphorus or arsenic) are diffused in, e.g., a polycrystalline silicon film, which is formed by a CVD technology, is used. The wirings such as the conductor plates 7, gate electrodes 10, word lines 10 and data lines 16 in a memory cell array are constituted by conducting layers, which are formed by the CVD technology. The wirings are formed by vapor phase reaction caused by a material, which is used for forming the wirings and supplied as a form of source gas. Thus purification of radioactive elements such as U and Th can be readily performed. The wirings in the memory cell array can be constituted with the highly pure conducting layer, and soft errors can be prevented. |
