| 摘要 |
PURPOSE:To improve the moisture-proof property of the Al and Al alloy to be used for wiring of a semiconductor device by a method wherein a ball bonding is performed first on the semiconductor wafer on which a passivation film is formed, then an oxygen plasma treatment is performed, and an oxide film is formed on the surface of an exposed bonding pad. CONSTITUTION:An eutectic reaction of Au on the back side of a pellet and the Si of a semiconductor wafer is generated on the semiconductor pellet on which a window is perforated at the part of bonding pad. After a heat treatment is performed at 400 deg.C in order to ohmic contact the Al electrode and the Si on the surface of the pellet, a gold wire 7 is ball-bonded, and when an oxygen plasma treatment is performed at 1mmToor and 300W for 30min, an oxide film 12 is formed on the surface of an Al bonding pad part 3, and the moisture- proof property of Al and Al alloy film can be improved. |
