发明名称 SEMICONDUCTOR DEVICE
摘要 <p>: A semiconductor device avoids defects caused by recrystallization in prior art devices. The surface of an insulator on which a material is to be recrystallized is flattened. A semiconductor layer employed for another use, for example as an interconnection between elements or as the gate electrode of a MOS transistor is disposed in the insulator. By virtue of the flattened insulator, the occurrence of crystal defects during recrystallization of the material is prevented.</p>
申请公布号 CA1220561(A) 申请公布日期 1987.04.14
申请号 CA19840460557 申请日期 1984.08.08
申请人 HITACHI, LTD. 发明人 WARABISAKO, TERUNORI;OHKURA, MAKOTO;MIYAO, MASANOBU
分类号 H01L27/00;H01L21/3205;H01L23/528;H01L23/532;(IPC1-7):H01L23/48;H01L23/52;H01L21/285 主分类号 H01L27/00
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