发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
<p>: A semiconductor device avoids defects caused by recrystallization in prior art devices. The surface of an insulator on which a material is to be recrystallized is flattened. A semiconductor layer employed for another use, for example as an interconnection between elements or as the gate electrode of a MOS transistor is disposed in the insulator. By virtue of the flattened insulator, the occurrence of crystal defects during recrystallization of the material is prevented.</p> |
申请公布号 |
CA1220561(A) |
申请公布日期 |
1987.04.14 |
申请号 |
CA19840460557 |
申请日期 |
1984.08.08 |
申请人 |
HITACHI, LTD. |
发明人 |
WARABISAKO, TERUNORI;OHKURA, MAKOTO;MIYAO, MASANOBU |
分类号 |
H01L27/00;H01L21/3205;H01L23/528;H01L23/532;(IPC1-7):H01L23/48;H01L23/52;H01L21/285 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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