发明名称 |
Dual electron injection structure and process with self-limiting oxidation barrier |
摘要 |
A dual electron injection structure (DEIS) and process for incorporating it into a semi-conductor structure, such as an E2PROM and/or NVRAM, is disclosed. The DEIS includes a composite structure formed from a layer of silicon rich nitride, a layer of silicon dioxide (SiO2) and a layer of silicon rich oxide. Preferably, a Plasma Enhanced Chemical Vapor Deposit (PECVD) method or a low pressure chemical vapor deposit (LPCVD) method is used to place the DEIS between the Poly 1 and Poly 2 devices of the semi-conductor structure.
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申请公布号 |
US4656729(A) |
申请公布日期 |
1987.04.14 |
申请号 |
US19850715318 |
申请日期 |
1985.03.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
KROLL, JR., CHARLES T.;STEPHENS, GEOFFREY B. |
分类号 |
H01L21/8247;G11C17/00;H01L21/314;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/04 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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