| 摘要 |
PURPOSE:To improve the electrical stability of a thin film diode by a method wherein, in formation of the diode in a p-i-n construction or p-i construction consisting of this silicon films or having a metal layer-i-type layer Schottky junction, each semiconductor layer constituting the junction is constituted of a crystallite Si layer or a two layer film of a cryatallite Si layer and an amorphous Si layer. CONSTITUTION:A this film diode is constituted of a p-type finely crystallized Si film 81 having a thickness of about 500Angstrom , an i-type finely crystallized Si film 82 having a thickness of 0.5mum and an n-type finely crystallized Si film 83 having a thickness of about 500Angstrom from the side of a Cr layer (Cr electrode) 51. Or the i-type Si layer 82 existing between the p-type layer 81 and the n-type layer 83 is formed of a composite film of an i-type a-Si layer 9 and the i-type crystallite Si layer 82. In case the diode is formed by a method wherein the film thickness of the layer 9 is set to 0.05-0.45mum, the thickness of the layer 82 is set to 0.45-0.05mum and the total film thickness is held at 0.5mum, its stability is increased as the film thickness of the layer 9 becomes thinner from 0.4mum. |
