| 摘要 |
PURPOSE:To eliminate errors between adjoining minor loops near the gate and to obtain a highly-reliable bubble memory element by disposing gate conductors and dummy conductors uniformly and changing the shape of these conductors. CONSTITUTION:A double-period major line is constituted of ''Permalloy'' patterns 111 and 112, and a minor loop 100 is constituted of ''Permalloy'' patterns 101-105, and a block replicate/transfer gate 230 is constituted of the electrically conductible first gate conductor 241, ''Permalloy'' patterns 111, 120, 121 and 102. The second gate conductor 242 is a dummy gate conductor. The first and second gate conductors 241 and 242 are brought near to (b) and (d) positions on the pattern and separated from (a), (c). Thus, residual magnetization caused by a bias magnetic field 180 can be stabilized, and transfer errors of bubble can by eliminated entirely. A good result is also given to operation characteristics of the replicate/transfer gate. |
