| 摘要 |
<p>PURPOSE:To reduce temperature drift and initial drift for switching-on, by making the storage time for turning-on-off of a transistor independent of the oscillation frequency. CONSTITUTION:When base potential V10 of transistor TRQ1 reaches VH under the state where base voltage V20 of TRQ2 is VH and TRQ2 is turned on and TRQ1, TRs Q3-Q6 and TRQ8 are turned off, TRs Q1, Q3, Q4 and Q6 are turned on and base potential V20 of TRQ2 becomes VL. Next, since TRQ5 is turned on, base potential V10 of TRQ1 falls with the time constant of R2XC1. If base potential VM of TRQ12 is set to satisfy VL<VM<VH, TRQ12 is turned on and TRs Q11 and Q10 are turned off when V10 reaches VM. When V10 reaches VL, TRQ2 is turned on, and TRs Q7 and Q9 are turned on, and TRQ10 is turned off, and consequently, TRQ8 is turned on, and base storage electric charge of TRs Q5 and Q6 are extracted, so that TRs Q5 and Q6 are turned off rapidly without the storage time.</p> |
