| 摘要 |
<p>A heat-resistant multijunction semiconductor device comprising a p-layer, a n-layer and a diffusion-blocking layer (3), the diffusion-blocking layer being provided between the p-layer and the n-layer. The semi-conductor device can reduce the fall-down of quality which is caused by the diffusion of dopant atoms in the p-layer and n-layer, respectively, into the other layer.</p> |
