| 摘要 |
A method of manufacturing a trench capacitor for a semiconductor memory element, comprises the steps of: forming a trench (2) in a semiconductor substrate (1); forming an oxide film (3) on the walls of the trench and a surface of the substrate; forming a selective deposition film (5) on only the oxide film at the bottom of the trench, the selective deposition film being a silicon film or a nitrogen-containing silicon film; selectively growing polysilicon (6) on only the selective deposition film, forming a silicon dioxide film 7 and providing an aluminum electrode 8. <IMAGE> |
