发明名称 MIS TYPE LIGHT EMITTING ELEMENT
摘要 PURPOSE:To improve luminous efficiency, and to stabilize characteristics by using an LB film consisting of an organic molecule containing an electron acceptable substance as an insulating film. CONSTITUTION:A MIS type light-emitting element is constituted of a GaP wafer 11, an In-Ge electrode 12, an LB film 13 and an Au electrode 14. The surface of the semiconductor substrate 11 is purified and treated, and the substrate 11 is installed into an LB film forming device. The inside of sub-phase aqueous phase is prepared and maintained at predetermined pH, temperature and metallic salt concentration, and the developing solution of a prescribed organic substance is dropped onto the water surface thereof, thus developing a monomolecular film layer. The LB film 13 in predetermined film thickness is accumulated onto the substrate 11, holding a monomolecular film at fixed surface pressure as a condensed film. The whole is dried sufficiently in an inert gas atmosphere, such as N2, Ar, etc., and a prescribed metal is evaporated onto the LB film through an evaporation mask with a proper pattern, thus forming the electrode 14.
申请公布号 JPS6276573(A) 申请公布日期 1987.04.08
申请号 JP19850214556 申请日期 1985.09.30
申请人 TOSHIBA CORP 发明人 MIZUSHIMA KOICHI;OKAMOTO MASAYOSHI;NAITO KATSUYUKI
分类号 H01L21/368;H01L33/28;H01L33/32;H01L33/34;H01L33/40;H01L33/44;H01L51/05;H01L51/50 主分类号 H01L21/368
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