| 摘要 |
PURPOSE:To prevent a latch-up phenomenon occurring in a source region, which is adjacent to a metal gate electrode, and to increase a latch-up current, by setting a channel current at a part facing the metal gate electrode at the opening part of a gate electrode, which is adjacent to the metal gate electrode so that the current is smaller than that in other regions. CONSTITUTION:A p<+> Si substrate 11 is prepared. An n<-> layer 12 having a low impurity concentration is formed thereon by epitaxial growing. Then, the surface of the layer 12 is oxidized, and a gate oxide film 15 is formed. A gate electrode 16 comprising a Poly Si film is formed thereon. With the electrode 16 as a mask, boron is diffused and a p-base layer 13 is formed. Then, an oxide film is formed at a part of the opening part of the gate electrode 16, which is adjacent to a metal gate electrode 21 that will be provided later. With the oxide film as a mask, As ions are implanted. Heat treatment is performed, and an n<+> source layer 14 is formed. Thereafter, a high concentration p<+> layer 20 is diffused and formed in the p-base layer 13. Then, a source electrode 17 and the metal gate electrode 21 are formed. |
