| 摘要 |
PURPOSE:To make the occurence of the latch up difficult by a method wherein in a semiconductor integrated circuit of the complementary MOS structure which is made as the source region of an MOS transistor, regions are connected by an almium wiring and a Schottky diode is formed at that connecting point between the wiring and the region. CONSTITUTION:The difference with conventional constitutions is that a Schottky diode is provided, and said Schottky diode 14 can be realized by forming an alminum electrode 20 directly at the sixth region 2b. In this case, the impurities concentration of the sixth region 2b is usually low so as said Schottky diode 14 can be formed. The alminum electrode 20 is also contacted to the fifth semiconductor region 4b, and electrically connects the fifth region 4b and the sixth region 2b. The characteristics of transistor (TR)101 is lowered by inserting the Schottky diode 14 to the emitter of N-P-N TR 101 within two N-P-N TR 101, 101' which are provided equivalently, and the latch up is prevented by reducing the amplification factor of the base ground current of TR 101. |
