| 摘要 |
<p>A process for making photoconductive semiconductor alloys and members with high reaction gas conversion efficiencies and at high deposition rates utilizes microwave energy to form a deposition plasma. The high deposition rates and high gas conversion efficiencies allow photoconductive members to be formed of amorphous semiconductor alloys at commercially viable rates. The process includes coupling microwave energy into a substantially enclosed reaction vessel containing a substrate and depositing amorphous photoconductive alloys onto the substrate from a reaction gas introduced into the vessel. The photoconductive member includes a bottom blocking layer (38, 48, 60, 72, 86, 96, 108, 120), a photoconductive layer (40, 50, 62, 74, 88, 98, 110, 122) and a top blocking layer (42, 52, 64, 76, 90, 100, 112, 124). The photoconductive member can be formed in a negative or positive charge type configuration. The members can include a top blocking enhancement layer (54, 80, 102, 128) and/or an improved infrared photoresponsive layer (78, 126).</p> |
