| 摘要 |
<p>PURPOSE:To make unnecessary the clear operation and to enable the clear indication of failures in write-in system circuit, by precharging with a given potential different from the precharge potential at write-in and readout for the memory cell in matrix arrangement, at the application of power supply. CONSTITUTION:When the storage device is in stable state with power supply, FF110 is set, a transistor Q1 connected to a resistor R1 of a precharge control circuit 180 is OFF, Q3, Q4 are ON, and the transistor Q1 connected to the resistor R2 the same as the resistor R1 of the circuit 181 is OFF. Thus, at the write-in and readout when FF110 of wirings 210, 211 via transistors 30, 31 is reset, one potential, which is equal normally, is lower or higher than other. The cell 10 and the like in matrix arrangement selected with this precharge potential is initially set to 1 or 0 corresponding to different potential of the lines 210, 211 independently of the previous memory content. Thus, the clear operation of memory cell at the application of power supply is made unnecessary and failure in the write-in system circuit at initial stage can clearly be depicted.</p> |
