| 摘要 |
PURPOSE:To obtain an MMIC in high yield with good reproducibility without short-circuiting between electrodes even if air bridge electrodes are deformed in an assembling process by extending part of an insulating film which forms a capacitor of a passive element on gate and drain electrodes under space wirings. CONSTITUTION:In a compound semiconductor integrated circuit having a plurality of sets of electrodes of FETs are provided, and FET n which air bridge electrodes 123s, 123s,... are connected between source electrodes 103s, 103s,..., and a passive element having an insulating film which forms a capacitor on the same substrate as the FETs, parts of the insulating film 11 for forming the capacitor of the passive element are extended on gate electrodes 113g, 113g,.., drain electrodes 113d, 113d,.. under the air bridge electrode. Thus, even if the air bridge electrodes are deformed, a shortchicuit with the other electrode does not occur, the electrodes can be formed in good reproducibility without complicating the steps. |
